SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES Low Forward Voltage : VF(2)=0.23V (Typ.) Small Package : USC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature VRM VR.
Low Forward Voltage : VF(2)=0.23V (Typ.) Small Package : USC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature
VRM VR IFM IO IFSM PD Tj
20 20 200 100 1 150
* 125
Storage Temperature Range
Tstg
-55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
UNIT V V mA mA A mW
CATHODE MARK E A K
F L
KDR368
SCHOTTKY BARRIER TYPE DIODE
B
G
1
H
2 D
M
M
1. ANODE 2. CATHODE
J C
I
DIM MILLIME.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KDR367 |
KEC |
DIODE | |
2 | KDR367E |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
3 | KDR368E |
KEC |
DIODE | |
4 | KDR322 |
KEC |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE | |
5 | KDR331 |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
6 | KDR331E |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
7 | KDR331V |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
8 | KDR357 |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
9 | KDR377 |
KEC |
Diode | |
10 | KDR377E |
KEC |
Diode | |
11 | KDR378 |
KEC |
Diode | |
12 | KDR378E |
KEC |
SCHOTTKY BARRIER TYPE DIODE |