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Offered in 2Gx8bit, the K9KAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit. The device is offered in 3.3V vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (4K+128)Byte page and an erase operation can be performed in typical 1.5ms on a (.
• Voltage Supply - 3.3V Device(K9XXG08UXM) : 2.7V ~ 3.6V
• Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit
• Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K)Byte
• Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 25µs(Max.) - Serial Access : 25ns(Min.)
* K9NCG08U5M : 50ns(Min.)
• Fast Write Cycle Time - Page Program time : 200µs(Typ.) - Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection - Program/Erase Lockout During Power Transitions
• Reliable CMO.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K9W4G08U1M |
Samsung |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
|
| 2 | K9W4G16U1M |
Samsung |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
|
| 3 | K9W8G08U1M |
Samsung |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
|
| 4 | K9W8G16U1M |
Samsung |
Nand Flash Memory |
|
| 5 | K9WAG08U1A |
Samsung semiconductor |
(K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory |
|
| 6 | K9WAG08U1D |
Samsung |
4Gb D-die NAND Flash |
|
| 7 | K9WAG08U1E |
Samsung |
4Gb E-die NAND Flash |
|
| 8 | K9WAG08U1F |
Samsung |
4Gb F-die NAND Flash |
|
| 9 | K9WAG08U1M |
Samsung semiconductor |
(K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory |
|
| 10 | K903 |
Fuji Electric |
2SK903-MR |
|
| 11 | K904 |
Fuji Semiconductors |
2SK904 |
|
| 12 | K91G08Q0M |
Samsung semiconductor |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
|