K9WAG08U1A - Samsung semiconductor

K9WAG08U1A (K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory

Offered in 1G x 8bit, the K9K8G08U0A is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data.

Features

• Voltage Supply - 2.70V ~ 3.60V
• Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8bit
• Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte
• Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max.) - Serial Access : 25ns(Min.)
* K9NBG08U5A : 50ns(Min.)
• Fast Write Cycle Time - Page Program time : 200µs(Typ.) - Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology .