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Offered in 512Mx8bit or 256Mx16bit, the K9XXGXXXXM is 4G bit with spare 128M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 1.
• Voltage Supply -1.8V device(K9K4GXXQ0M): 1.70V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V
• Organization - Memory Cell Array -X8 device(K9XXG08XXM) : (512M + 16,384K)bit x 8bit -X16 device(K9XXG16XXM) : (256M + 8,192K)bit x 16bit - Data Register -X8 device(K9XXG08XXM): (2K + 64)bit x8bit -X16 device(K9XXG16XXM): (1K + 32)bit x16bit - Cache Register -X8 device(K9XXG08XXM) : (2K + 64)bit x8bit -X16 device(K9XXG16XXM) : (1K + 32)bit x16bit
• Automatic Program and Erase - Page Program -X8 device(K9XXG08XXM) : (2K + 64)Byte -X16 device(K9XXG16XXM) : (1K + 32)Word - Block Erase -X8 device(K9XXG0.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K9W8G16U1M |
Samsung |
Nand Flash Memory |
|
| 2 | K9W4G08U1M |
Samsung |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
|
| 3 | K9W4G16U1M |
Samsung |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
|
| 4 | K9WAG08U1A |
Samsung semiconductor |
(K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory |
|
| 5 | K9WAG08U1D |
Samsung |
4Gb D-die NAND Flash |
|
| 6 | K9WAG08U1E |
Samsung |
4Gb E-die NAND Flash |
|
| 7 | K9WAG08U1F |
Samsung |
4Gb F-die NAND Flash |
|
| 8 | K9WAG08U1M |
Samsung semiconductor |
(K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory |
|
| 9 | K9WBG08U1M |
Samsung |
FLASH MEMORY |
|
| 10 | K903 |
Fuji Electric |
2SK903-MR |
|
| 11 | K904 |
Fuji Semiconductors |
2SK904 |
|
| 12 | K91G08Q0M |
Samsung semiconductor |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
|