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Offered in 1Gx8bit, the K9F8G08X0M is a 8G-bit NAND Flash Memory with spare 256M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (4K+128)Byte page and an erase operation can be performed in typical 1.5m.
• Voltage Supply - 2.7V Device(K9F8G08B0M) : 2.5V ~ 2.9V - 3.3V Device(K9F8G08U0M) : 2.7V ~ 3.6V
• Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (4K + 128) x 8bit
• Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K)Byte
• Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 25µs(Max.) - Serial Access : 25ns(Min.)
• Fast Write Cycle Time - Page Program time : 200µs(Typ.) - Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection - Program/Erase Lockout During Power Transitions .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K9F8G08UXM |
Samsung Electronics |
FLASH MEMORY |
|
| 2 | K9F8G08B0M |
Samsung Electronics |
FLASH MEMORY |
|
| 3 | K9F8008W0M-TCB0 |
Samsung semiconductor |
1M x 8 bit NAND Flash Memory |
|
| 4 | K9F8008W0M-TIB0 |
Samsung semiconductor |
1M x 8 bit NAND Flash Memory |
|
| 5 | K9F1208B0B |
Samsung semiconductor |
64M x 8 Bit NAND Flash Memory |
|
| 6 | K9F1208B0C |
Samsung semiconductor |
FLASH MEMORY |
|
| 7 | K9F1208D0A |
Samsung semiconductor |
(K9F1208x0A / K9F1216x0A) 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory |
|
| 8 | K9F1208D0B |
Samsung semiconductor |
64M x 8 Bit NAND Flash Memory |
|
| 9 | K9F1208D0B-D |
Samsung semiconductor |
64M x 8 Bit NAND Flash Memory |
|
| 10 | K9F1208D0B-Y |
Samsung semiconductor |
64M x 8 Bit NAND Flash Memory |
|
| 11 | K9F1208Q0A |
Samsung semiconductor |
512Mb/256Mb 1.8V NAND Flash Errata |
|
| 12 | K9F1208Q0A-XXB0 |
Samsung semiconductor |
512Mb/256Mb 1.8V NAND Flash Errata |
|