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Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.7V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-b.
and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 1 K9F1208R0B K9F1208B0B K9F1208U0B Preliminary FLASH MEMORY 64M x 8 Bit NAND Flash Memory PRODUCT LIST Part Number K9F12.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K9F1208D0A |
Samsung semiconductor |
(K9F1208x0A / K9F1216x0A) 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory |
|
| 2 | K9F1208D0B-D |
Samsung semiconductor |
64M x 8 Bit NAND Flash Memory |
|
| 3 | K9F1208D0B-Y |
Samsung semiconductor |
64M x 8 Bit NAND Flash Memory |
|
| 4 | K9F1208B0B |
Samsung semiconductor |
64M x 8 Bit NAND Flash Memory |
|
| 5 | K9F1208B0C |
Samsung semiconductor |
FLASH MEMORY |
|
| 6 | K9F1208Q0A |
Samsung semiconductor |
512Mb/256Mb 1.8V NAND Flash Errata |
|
| 7 | K9F1208Q0A-XXB0 |
Samsung semiconductor |
512Mb/256Mb 1.8V NAND Flash Errata |
|
| 8 | K9F1208Q0B |
Samsung semiconductor |
64M x 8 Bit NAND Flash Memory |
|
| 9 | K9F1208Q0B-D |
Samsung semiconductor |
64M x 8 Bit NAND Flash Memory |
|
| 10 | K9F1208Q0B-F |
Samsung semiconductor |
64M x 8 Bit NAND Flash Memory |
|
| 11 | K9F1208Q0B-H |
Samsung semiconductor |
64M x 8 Bit NAND Flash Memory |
|
| 12 | K9F1208Q0B-P |
Samsung semiconductor |
64M x 8 Bit NAND Flash Memory |
|