K9F8008W0M-TCB0 - Samsung semiconductor

K9F8008W0M-TCB0 1M x 8 bit NAND Flash Memory

The K9F8008W0M is a 1M(1,048,576)x8bit NAND Flash Memory with a spare 32K(32,768)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 264-byte page in typically 250 µs and an erase operation can be performed in typically 2ms on a 4K-byte block. Data in the page can be read ou.

Features

• Voltage supply : 2.7V ~ 5.5V
• Organization - Memory Cell Array : (1M + 32K)bit x 8bit - Data Register : (256 + 8)bit x8bit
• Automatic Program and Erase(Typical) - Page Program : (256 + 8)Byte in 250µs - Block Erase : (4K + 128)Byte in 2ms - Status Register
• 264-Byte Page Read Operation - Random Access : 10µs(Max.) - Serial Page Access : 80ns(Min.)
• System Performance Enhancement - Ready/ Busy Status Output
• Command/Address/Data Multiplexed I/O port
• Hardware Data Protection - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology - Endurance : 1M Progra.