K8A5615ETA - Samsung Electronics

K8A5615ETA Flash Memory

of range limitation of data read out during program suspend.(Refer to "Program Suspend/Resume" paragragh) Draft Date March 15, 2004 June 1, 2004 Remark Advance Preliminary 0.2 July 5, 2004 Preliminary 0.3 August 3, 2004 Preliminary 0.4 August 23, 2004 Preliminary 0.5 September 6, 2004 Preliminary 0.6 Revision December 13, 2004 Preliminary - Ad.

Features

• Single Voltage, 1.7V to 1.95V for Read and Write operations
• Organization - 16,772,216 x 16 bit ( Word Mode Only)
• Read While Program/Erase Operation
• Multiple Bank Architecture - 16 Banks (16Mb Partition)
• OTP Block : Extra 256Byte block
• Read Access Time (@ CL=30pF) - Asynchronous Random Access Time : 90ns (54MHz) / 80ns (66MHz) - Synchronous Random Access Time : 88.5ns (54MHz) / 70ns (66MHz) - Burst Access Time : 14.5ns (54MHz) / 11ns (66MHz)
• Burst Length : - Continuous Linear Burst - Linear Burst : 8-word & 16-word with No-wrap & Wrap
• Block Architecture - Eight 4Kword blocks and.