TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A50D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: m.
f high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Th.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K8A55DA |
Toshiba |
TK8A55DA | |
2 | K8A5615EBA |
Samsung Electronics |
Flash Memory | |
3 | K8A5615ETA |
Samsung Electronics |
Flash Memory | |
4 | K8A56EBC |
Samsung semiconductor |
256Mb C-die NOR FLASH | |
5 | K8A56ETC |
Samsung semiconductor |
256Mb C-die NOR FLASH | |
6 | K8A56EZC |
Samsung semiconductor |
256Mb C-die NOR FLASH | |
7 | K8A57EBC |
Samsung semiconductor |
256Mb C-die NOR FLASH | |
8 | K8A57ETC |
Samsung semiconductor |
256Mb C-die NOR FLASH | |
9 | K8A57EZC |
Samsung semiconductor |
256Mb C-die NOR FLASH | |
10 | K8A1215EBC |
Samsung semiconductor |
512Mb C-die NOR FLASH | |
11 | K8A1215ETC |
Samsung semiconductor |
512Mb C-die NOR FLASH | |
12 | K8A1215EZC |
Samsung semiconductor |
512Mb C-die NOR FLASH |