TK8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A55DA Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A Absolute Maximum Ratings (Ta = 25°C) Characteristics S Drain-source voltage Gate-source voltage DC (Note Drain curren.
TOSHIBA ⎯ SC-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliabilit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K8A50D |
Toshiba |
Silicon N-Channel MOSFET | |
2 | K8A5615EBA |
Samsung Electronics |
Flash Memory | |
3 | K8A5615ETA |
Samsung Electronics |
Flash Memory | |
4 | K8A56EBC |
Samsung semiconductor |
256Mb C-die NOR FLASH | |
5 | K8A56ETC |
Samsung semiconductor |
256Mb C-die NOR FLASH | |
6 | K8A56EZC |
Samsung semiconductor |
256Mb C-die NOR FLASH | |
7 | K8A57EBC |
Samsung semiconductor |
256Mb C-die NOR FLASH | |
8 | K8A57ETC |
Samsung semiconductor |
256Mb C-die NOR FLASH | |
9 | K8A57EZC |
Samsung semiconductor |
256Mb C-die NOR FLASH | |
10 | K8A1215EBC |
Samsung semiconductor |
512Mb C-die NOR FLASH | |
11 | K8A1215ETC |
Samsung semiconductor |
512Mb C-die NOR FLASH | |
12 | K8A1215EZC |
Samsung semiconductor |
512Mb C-die NOR FLASH |