K7M803625B - Samsung semiconductor

K7M803625B 256Kx36 & 512Kx18-Bit Flow Through NtRAM

The K7M803625B and K7M801825B are 9,437,184-bit Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied "High or Low". A.

Features

256Kx36 & 512Kx18 Flow-Through NtRAMTM 256Kx36 & 512Kx18-Bit Flow Through NtRAMTM GENERAL DESCRIPTION The K7M803625B and K7M801825B are 9,437,184-bit Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied "High or Low". Asynchronous inputs include the sleep mode enable(ZZ). Output Enable controls the outputs at any given time. Write cycles are internally .