K7M163625M - Samsung semiconductor

K7M163625M (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM

The K7M163625M and K7M161825M are 18,874,368-bits Synchronous Static SRAMs. The N tRAM TM , or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied "High or Lo.

Features

• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data contention .
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• TTL-Level Three-State Outputs.
• 100-TQFP-1420A /119BGA(7x17 Ball Grid Array Package). GENERAL DESCRIPTION The K7M163625M and K7M161825M are 18,874,368-bits Synchronous Stati.