The K6X4016T3F families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipati.
• Process Technology: Full CMOS
• Organization: 256K x16
• Power Supply Voltage: 2.7~3.6V
• Low Data Retention Voltage: 2V(Min)
• Three State Outputs
• Package Type: 44-TSOP2-400F
CMOS SRAM
GENERAL DESCRIPTION
The K6X4016T3F families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family K6X4016T3F-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K6X4016C3F |
Samsung semiconductor |
256Kx16 bit Low Power full CMOS Static RAM | |
2 | K6X4008C1F |
Samsung semiconductor |
512Kx8 bit Low Power full CMOS Static RAM | |
3 | K6X4008T1F |
Samsung semiconductor |
512K x 8 bit Low Power and Low Voltage CMOS Static RAM | |
4 | K6X0808C1D |
Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM | |
5 | K6X0808T1D |
Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM | |
6 | K6X1008C2D |
Samsung semiconductor |
128Kx8 bit Low Power CMOS Static RAM | |
7 | K6X1008T2D |
Samsung semiconductor |
128Kx8 bit Low Power CMOS Static RAM | |
8 | K6X8008C2B |
Samsung semiconductor |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM | |
9 | K6X8008T2B |
Samsung semiconductor |
CMOS SRAM | |
10 | K6X8016C3B |
Samsung semiconductor |
512Kx16 bit Low Power Full CMOS Static RAM | |
11 | K6X8016T3B |
Samsung semiconductor |
512Kx16 bit Low Power Full CMOS Static RAM | |
12 | K60H603 |
Infineon Technologies |
IKW60N60H3 |