The K6X0808C1D families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support verious operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipat.
• Process Technology: Full CMOS
• Organization: 32K x 8
• Power Supply Voltage: 4.5~5.5V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 28-DIP-600B, 28-SOP-450, 28-TSOP1-0813.4F/R
CMOS SRAM
GENERAL DESCRIPTION
The K6X0808C1D families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support verious operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAM.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K6X0808T1D |
Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM | |
2 | K6X1008C2D |
Samsung semiconductor |
128Kx8 bit Low Power CMOS Static RAM | |
3 | K6X1008T2D |
Samsung semiconductor |
128Kx8 bit Low Power CMOS Static RAM | |
4 | K6X4008C1F |
Samsung semiconductor |
512Kx8 bit Low Power full CMOS Static RAM | |
5 | K6X4008T1F |
Samsung semiconductor |
512K x 8 bit Low Power and Low Voltage CMOS Static RAM | |
6 | K6X4016C3F |
Samsung semiconductor |
256Kx16 bit Low Power full CMOS Static RAM | |
7 | K6X4016T3F |
Samsung semiconductor |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM | |
8 | K6X8008C2B |
Samsung semiconductor |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM | |
9 | K6X8008T2B |
Samsung semiconductor |
CMOS SRAM | |
10 | K6X8016C3B |
Samsung semiconductor |
512Kx16 bit Low Power Full CMOS Static RAM | |
11 | K6X8016T3B |
Samsung semiconductor |
512Kx16 bit Low Power Full CMOS Static RAM | |
12 | K60H603 |
Infineon Technologies |
IKW60N60H3 |