K6X4016T3F |
Part Number | K6X4016T3F |
Manufacturer | Samsung semiconductor |
Description | The K6X4016T3F families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of sy... |
Features |
• Process Technology: Full CMOS • Organization: 256K x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 2V(Min) • Three State Outputs • Package Type: 44-TSOP2-400F CMOS SRAM GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family K6X4016T3F-... |
Document |
K6X4016T3F Data Sheet
PDF 138.28KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | K6X4016C3F |
Samsung semiconductor |
256Kx16 bit Low Power full CMOS Static RAM | |
2 | K6X4008C1F |
Samsung semiconductor |
512Kx8 bit Low Power full CMOS Static RAM | |
3 | K6X4008T1F |
Samsung semiconductor |
512K x 8 bit Low Power and Low Voltage CMOS Static RAM | |
4 | K6X0808C1D |
Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM | |
5 | K6X0808T1D |
Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM |