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K6T4016V4C, K6T4016U4C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 Initial draft - UB/LB power control 0.01 Errata correction 0.1 Revise - Add 3,3V product : K6T4016V4C 1.0 Revise - Specified CSP type. Draft Date July 4, 1998 Remark Preliminary August 17, 1998 Se.
• Process Technology: TFT
• Organization: 256K x16
• Power Supply Voltage
K6T4016V4C Family: 3.0~3.6V
K6T4016U4C Family: 2.7~3.3V
• Low Data Retention Volt.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K6T4016U3C |
Samsung semiconductor |
CMOS SRAM |
|
| 2 | K6T4016V3C |
Samsung semiconductor |
CMOS SRAM |
|
| 3 | K6T4016V4C |
Samsung semiconductor |
CMOS SRAM |
|
| 4 | K6T4008C1B |
Samsung semiconductor |
CMOS SRAM |
|
| 5 | K6T4008C1C |
Samsung semiconductor |
CMOS SRAM |
|
| 6 | K6T4008U1C |
Samsung semiconductor |
CMOS SRAM |
|
| 7 | K6T4008V1C |
Samsung semiconductor |
CMOS SRAM |
|
| 8 | K6T0808C1D |
Samsung semiconductor |
CMOS SRAM |
|
| 9 | K6T0808U1D |
Samsung semiconductor |
CMOS SRAM |
|
| 10 | K6T0808V1D |
Samsung semiconductor |
CMOS SRAM |
|
| 11 | K6T1008C2C |
Samsung semiconductor |
CMOS SRAM |
|
| 12 | K6T1008C2E |
Samsung semiconductor |
CMOS SRAM |
|