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K6T0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No History 0.0 Initial draft 0.1 First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM62256D-4/5/7 Family tOH = 5 → 10ns - KM62256DL/DLI IDR = 50→30µA KM62256DL-L/DLI-L IDR =.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K6T0808U1D |
Samsung semiconductor |
CMOS SRAM |
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| 2 | K6T0808V1D |
Samsung semiconductor |
CMOS SRAM |
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| 3 | K6T1008C2C |
Samsung semiconductor |
CMOS SRAM |
|
| 4 | K6T1008C2E |
Samsung semiconductor |
CMOS SRAM |
|
| 5 | K6T1008U2C |
Samsung semiconductor |
128K x8 bit Low Power and Low Voltage CMOS Static RAM |
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| 6 | K6T1008V2C |
Samsung semiconductor |
128K x8 bit Low Power and Low Voltage CMOS Static RAM |
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| 7 | K6T2008S2A |
Samsung Semiconductor |
256K X 8 Bit Low Power And Low Voltage CMOS Static RAM |
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| 8 | K6T2008S2M |
Samsung Semiconductor |
256K X 8 Bit Low Power And Low Voltage CMOS Static RAM |
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| 9 | K6T2008U2A |
Samsung semiconductor |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM |
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| 10 | K6T2008V2A |
Samsung semiconductor |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM |
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| 11 | K6T4008C1B |
Samsung semiconductor |
CMOS SRAM |
|
| 12 | K6T4008C1C |
Samsung semiconductor |
CMOS SRAM |
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