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K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 Initial Draft 0.1 Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at read ICC1 : 3mA → 4mA ICC2 : 35mA → 30mA ISB : 0.5mA → 0.3mA ISB1.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K6T4008C1B |
Samsung semiconductor |
CMOS SRAM |
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| 2 | K6T4008C1C |
Samsung semiconductor |
CMOS SRAM |
|
| 3 | K6T4008U1C |
Samsung semiconductor |
CMOS SRAM |
|
| 4 | K6T4016U3C |
Samsung semiconductor |
CMOS SRAM |
|
| 5 | K6T4016U4C |
Samsung semiconductor |
CMOS SRAM |
|
| 6 | K6T4016V3C |
Samsung semiconductor |
CMOS SRAM |
|
| 7 | K6T4016V4C |
Samsung semiconductor |
CMOS SRAM |
|
| 8 | K6T0808C1D |
Samsung semiconductor |
CMOS SRAM |
|
| 9 | K6T0808U1D |
Samsung semiconductor |
CMOS SRAM |
|
| 10 | K6T0808V1D |
Samsung semiconductor |
CMOS SRAM |
|
| 11 | K6T1008C2C |
Samsung semiconductor |
CMOS SRAM |
|
| 12 | K6T1008C2E |
Samsung semiconductor |
CMOS SRAM |
|