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The K6T2008V2A and K6T2008U2A families are fabricated by SAMSUNG′s advanced CMOS process technology. The family support various operating temperature ranges and have various package types for user flexibility of system design. The family also support low data retention voltage for battery backup operation with low data retention current. PRODUCT FAMILY Powe.
Draft Data
May 26, 1998 October 8, 1998 July 21, 1999
Remark
Advance Final Final
2.01
October 24, 2001
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
Revision 2.01 October 2001
www.DataSheet4U.com
K6T2008V2A, K6T2008U2A Family
256Kx8 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
• Process Technology: TFT
• Organization: 256Kx8
• Power Supply Voltag.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K6T2008S2A |
Samsung Semiconductor |
256K X 8 Bit Low Power And Low Voltage CMOS Static RAM |
|
| 2 | K6T2008S2M |
Samsung Semiconductor |
256K X 8 Bit Low Power And Low Voltage CMOS Static RAM |
|
| 3 | K6T2008V2A |
Samsung semiconductor |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM |
|
| 4 | K6T0808C1D |
Samsung semiconductor |
CMOS SRAM |
|
| 5 | K6T0808U1D |
Samsung semiconductor |
CMOS SRAM |
|
| 6 | K6T0808V1D |
Samsung semiconductor |
CMOS SRAM |
|
| 7 | K6T1008C2C |
Samsung semiconductor |
CMOS SRAM |
|
| 8 | K6T1008C2E |
Samsung semiconductor |
CMOS SRAM |
|
| 9 | K6T1008U2C |
Samsung semiconductor |
128K x8 bit Low Power and Low Voltage CMOS Static RAM |
|
| 10 | K6T1008V2C |
Samsung semiconductor |
128K x8 bit Low Power and Low Voltage CMOS Static RAM |
|
| 11 | K6T4008C1B |
Samsung semiconductor |
CMOS SRAM |
|
| 12 | K6T4008C1C |
Samsung semiconductor |
CMOS SRAM |
|