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The K6T1008V2C and K6T1008U2C families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMIL.
• Process Technology: 0.4 µm CMOS
• Organization: 128K x8
• Power Supply Voltage: K6T1008V2C family: 3.0~3.6V K6T1008U2C family: 2.7~3.3V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 32-SOP-525, 32-TSOP1-0820F/R, 32-TSOP1-0813.4F/R
CMOS SRAM www.DataSheet4U.com
GENERAL DESCRIPTION
The K6T1008V2C and K6T1008U2C families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data ret.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K6T1008C2C |
Samsung semiconductor |
CMOS SRAM |
|
| 2 | K6T1008C2E |
Samsung semiconductor |
CMOS SRAM |
|
| 3 | K6T1008U2C |
Samsung semiconductor |
128K x8 bit Low Power and Low Voltage CMOS Static RAM |
|
| 4 | K6T0808C1D |
Samsung semiconductor |
CMOS SRAM |
|
| 5 | K6T0808U1D |
Samsung semiconductor |
CMOS SRAM |
|
| 6 | K6T0808V1D |
Samsung semiconductor |
CMOS SRAM |
|
| 7 | K6T2008S2A |
Samsung Semiconductor |
256K X 8 Bit Low Power And Low Voltage CMOS Static RAM |
|
| 8 | K6T2008S2M |
Samsung Semiconductor |
256K X 8 Bit Low Power And Low Voltage CMOS Static RAM |
|
| 9 | K6T2008U2A |
Samsung semiconductor |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM |
|
| 10 | K6T2008V2A |
Samsung semiconductor |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM |
|
| 11 | K6T4008C1B |
Samsung semiconductor |
CMOS SRAM |
|
| 12 | K6T4008C1C |
Samsung semiconductor |
CMOS SRAM |
|