K4S280832M - Samsung semiconductor

K4S280832M 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

The K4S280832M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst le.

Features

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S280832M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAM.