The K4S280832A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst le.
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• JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle)
CMOS SDRAM
GENERAL DESCRIPTION
The K4S280832A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s hig.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K4S280832B |
Samsung Electronics |
128M-bit SDRAM | |
2 | K4S280832C |
Samsung semiconductor |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL | |
3 | K4S280832E-TC75 |
Samsung semiconductor |
128Mb E-die SDRAM Specification | |
4 | K4S280832E-TL75 |
Samsung semiconductor |
128Mb E-die SDRAM Specification | |
5 | K4S280832F-TC75 |
Samsung semiconductor |
128Mb F-die SDRAM Specification | |
6 | K4S280832F-TL75 |
Samsung semiconductor |
128Mb F-die SDRAM Specification | |
7 | K4S280832F-UC75 |
Samsung semiconductor |
128Mb F-die SDRAM | |
8 | K4S280832F-UL75 |
Samsung semiconductor |
128Mb F-die SDRAM | |
9 | K4S280832I |
Samsung Semiconductor |
(K4S28xx32I) JEDEC standard 3.3V power supply LVTTL compatible | |
10 | K4S280832K |
Samsung semiconductor |
128Mb K-die SDRAM Specification | |
11 | K4S280832M |
Samsung semiconductor |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL | |
12 | K4S280832O |
Samsung semiconductor |
128Mb O-die SDRAM |