The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactio.
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (4K Cycle)
GENERAL DESCRIPTION
The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,60.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K4S280832F-TL75 |
Samsung semiconductor |
128Mb F-die SDRAM Specification | |
2 | K4S280832F-UC75 |
Samsung semiconductor |
128Mb F-die SDRAM | |
3 | K4S280832F-UL75 |
Samsung semiconductor |
128Mb F-die SDRAM | |
4 | K4S280832A |
Samsung semiconductor |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL | |
5 | K4S280832B |
Samsung Electronics |
128M-bit SDRAM | |
6 | K4S280832C |
Samsung semiconductor |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL | |
7 | K4S280832E-TC75 |
Samsung semiconductor |
128Mb E-die SDRAM Specification | |
8 | K4S280832E-TL75 |
Samsung semiconductor |
128Mb E-die SDRAM Specification | |
9 | K4S280832I |
Samsung Semiconductor |
(K4S28xx32I) JEDEC standard 3.3V power supply LVTTL compatible | |
10 | K4S280832K |
Samsung semiconductor |
128Mb K-die SDRAM Specification | |
11 | K4S280832M |
Samsung semiconductor |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL | |
12 | K4S280832O |
Samsung semiconductor |
128Mb O-die SDRAM |