K4N56163QF-GC - Samsung

K4N56163QF-GC 256Mbit gDDR2 SDRAM

FOR 4M x 16Bit x 4 Bank gDDR2 SDRAM The 256Mb gDDR2 SDRAM chip is organized as 4Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 1000Mb/sec/pin for general applications. The chip is designed to comply with the following key gDDR2 SDRAM features such as posted CAS with additive la.

Features

• 1.8V + 0.1V power supply for device operation
• 1.8V + 0.1V power supply for I/O interface
• 4 Banks operation
• Posted CAS
• Programmable CAS Letency : 4,5,6 and 7
• Programmable Additive Latency : 0, 1, 2, 3. 4 and 5
• Write Latency (WL) = Read Latency (RL) -1
• Burst Legth : 4 and 8 (Interleave/nibble sequential)
• Programmable Sequential/ Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-chip Driver (OCD) Impedance Adjustment
• On Die Termination
• Refresh and Self Refresh Average Refesh Period 7.8us at lower then TCA.