K4N26323AE-GC - Samsung

K4N26323AE-GC 128Mbit GDDR2 SDRAM

- 1bank, 2bank system - Added System Selection mode in EMRS table. Revision 0.0 (August 2001) -3- Rev. 1.7 (Jan. 2003) K4N26323AE-GC 1M x 32Bit x 4 Banks GDDR2 Synchronous DRAM with Differential Data Strobe 128M GDDR2 SDRAM FEATURES • 2.5V + 0.1V power supply for device operation • 1.8V + 0.1V power supply for I/O interface • On-Die Termination for all.

Features

• 2.5V + 0.1V power supply for device operation
• 1.8V + 0.1V power supply for I/O interface
• On-Die Termination for all inputs except CKE,ZQ
• Output Driver Strength adjustment by EMRS
• SSTL_18 compatible inputs/outputs
• 4 banks operation
• MRS cycle with address key programs - CAS latency : 5, 6, 7 (clock) - Burst length : 4 only - Burst type : sequential only
• Additive latency (AL): 0,1(clock)
• Read latency(RL) : CL+AL
• Write latency(WL) : AL+1
• Differential Data Strobes for Data-in, Date out ; - 4 DQS and /DQS(one differential strobe per byte) - Single Data Strobes by EMRS.
• Edge .