K4A60DB - Toshiba Semiconductor

K4A60DB TK4A60DB

TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DB Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) • High forward transfer admittance: |Yfs| = 2.2 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600V) • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Ф3.2 ± 0.

Features

n 3: Source JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual relia.