TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DA Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Ab.
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to c.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K4A60DB |
Toshiba Semiconductor |
TK4A60DB | |
2 | K4A4G045WD |
Samsung |
4Gb D-die DDR4 SDRAM | |
3 | K4A4G045WE |
Samsung |
4Gb E-die DDR4 SDRAM | |
4 | K4A4G085WD |
Samsung |
4Gb D-die DDR4 SDRAM | |
5 | K4A4G085WE |
Samsung |
4Gb E-die DDR4 SDRAM | |
6 | K4A4G165WD |
Samsung |
4Gb D-die DDR4 SDRAM | |
7 | K4A4G165WE |
Samsung |
4Gb E-die DDR4 SDRAM | |
8 | K4A8G045WB |
Samsung |
8Gb B-die DDR4 SDRAM | |
9 | K4A8G085WB |
Samsung |
8Gb B-die DDR4 SDRAM | |
10 | K4A8G165WB |
Samsung |
8Gb B-die DDR4 SDRAM | |
11 | K4A8G165WC |
Samsung |
8Gb C-die DDR4 SDRAM | |
12 | K4003 |
Toshiba Semiconductor |
2SK4003 |