K3638 - NEC

K3638 2SK3638

The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3638-ZK PACKAGE TO-252 (MP-3ZK) FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS.

Features

a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3638-ZK PACKAGE TO-252 (MP-3ZK) FEATURES
• Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 18 A)
• Low Ciss: Ciss = 1100 pF TYP.
• Built-in gate protection diode (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Curren.