K363 - Toshiba

K363 N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK363 Unit: mm • High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low RDS (ON): RDS (ON) = 20 Ω (typ.) (IDSS = 15 mA) Absolute Maximum Ratings (Ta.

Features

ductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.21 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Drain-source ON resistance IGSS VGS = −30 V, VDS = 0 ⎯ ⎯ −1.0 nA V (BR) GDS VDS.