K3637 - Panasonic Semiconductor

K3637 2SK3637

Power MOSFETs 2SK3637 Silicon N-channel power MOSFET 15.5±0.5 Unit: mm φ 3.2±0.1 5˚ 3.0±0.3 5˚ For PDP/For high-speed switching (10.0) 26.5±0.5 (4.5) • Low on-resistance, low Qg • High avalanche resistance (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5˚ 5˚ ■ Absolute Maximum Ratings TC = 25°C Parameter www.DataSheet4U.com Drain-source sur.

Features

(23.4) 1 2SK3637
■ Electrical Characteristics (Continued) TC = 25°C ± 3°C Parameter Total gate charge Gate-source charge Gate-drain charge Channel-case heat resistance Channel-atmosphere heat resistance Symbol Qg Qgs Qgd Rth(ch-c) Rth(ch-a) VGS = 10 V Conditions VDD = 100 V, ID = 25 A Min Typ 85 30 12 1.25 41.6 Max Unit nC nC nC °C/W °C/W Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. www.DataSheet4U.com Safe operation area 103 IDP t = 100 µs 102 ID DC 10 1 ms 10 ms 1 100 ms Non repetitive pulse TC = 25°C Drain current ID .