2SK2957(L), 2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 4 G RENESAS Package code: PRSS0004AE-B (Package na.
• Low on-resistance RDS(on) = 7 mΩ typ.
• 4 V gate drive devices.
• High speed switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
4 4 G
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1))
D 1. Gate 2. Drain 3. Source 4. Drain
1 1 2 3
2
3 S
Rev.4.00 Sep 07, 2005 page 1 of 7
2SK2957(L), 2SK2957(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2950M |
Siemens |
IF Filter | |
2 | K2952 |
Toshiba |
2SK2952 | |
3 | K2953 |
Toshiba Semiconductor |
2SK2953 | |
4 | K2955M |
EPCOS |
IF Filter | |
5 | K2956 |
Renesas |
Silicon N-Channel MOSFET | |
6 | K2958 |
Hitachi Semiconductor |
2SK2958 | |
7 | K2959 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
8 | K2900-01 |
Fuji Electric |
N-channel MOS-FET | |
9 | K2902-01MR |
Fuji Electric |
2SK2902-01MR | |
10 | K2915 |
Toshiba Semiconductor |
2SK2915 | |
11 | K2917 |
Toshiba Semiconductor |
2SK2917 | |
12 | K2919 |
Sanyo |
2SK2919 |