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2SK2902-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 2.54 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless o.
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOS-FET
TO-220F15
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
2.54
3. Source
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV
*1 PD Tch Tstg Rating 60 ±45 ±180 ±30 461.9 40 +150 -55 to +15.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K2900-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 2 | K2915 |
Toshiba Semiconductor |
2SK2915 |
|
| 3 | K2917 |
Toshiba Semiconductor |
2SK2917 |
|
| 4 | K2919 |
Sanyo |
2SK2919 |
|
| 5 | K2925 |
Hitachi |
Silicon N-Channel MOSFET |
|
| 6 | K2926 |
Hitachi Semiconductor |
2SK2926 |
|
| 7 | K2929 |
Hitachi Semiconductor |
2SK2929 |
|
| 8 | K2930 |
Hitachi Semiconductor |
2SK2930 |
|
| 9 | K2936 |
Hitachi Semiconductor |
2SK2936 |
|
| 10 | K2936 |
Renesas |
Silicon N Channel MOS FET |
|
| 11 | K2937 |
Renesas Technology |
2SK2937 |
|
| 12 | K2938 |
Hitachi Semiconductor |
2SK2938 |
|