K2956 - Renesas

K2956 Silicon N-Channel MOSFET

2SK2956 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching Outline REJ03G1056-0401 (Previous: ADE-208-566B) Rev.4.01 Apr 27, 2006 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D G 1. Gate 2. Drain 3. Source 12 3 S Rev.4.01 Apr 27, 2006 pa.

Features

• Low on-resistance RDS(on) = 7 mΩ typ.
• 4 V gate drive devices.
• High speed switching Outline REJ03G1056-0401 (Previous: ADE-208-566B) Rev.4.01 Apr 27, 2006 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C
•FM) D G 1. Gate 2. Drain 3. Source 12 3 S Rev.4.01 Apr 27, 2006 page 1 of 6 2SK2956 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID.