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Features
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istance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c) Rth (ch−a)
2.78 62.5
°C / W °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 43.6 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-09-02
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current Gate−source breakdown voltage Drain cut−off cur...
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K2717 Data Sheet
