2SK2728 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings Outline TO–3P ADE-208-454 B 3rd. Edition D G 1. Gate 1 2. Drain 2 3 (Flange) 3. Source S 2SK2728 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage .
• Low on-resistance
• High speed switching
• Low drive current
• Avalanche ratings
Outline
TO
–3P
ADE-208-454 B 3rd. Edition
D
G
1. Gate
1 2. Drain
2 3
(Flange) 3. Source
S
2SK2728
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
VDSS VGSS ID I
*1
D(pulse)
I DR I AP
* 3 EAR
* 3 Pch
*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2723 |
NEC |
2SK2723 | |
2 | K2725 |
Renesas Technology |
2SK2725 | |
3 | K2726 |
Renesas |
Silicon N-Channel MOSFET | |
4 | K270 |
Aeroflex |
Silicon Zener Diodes | |
5 | K270 |
Knox Inc |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | |
6 | K2700 |
Toshiba Semiconductor |
2SK2700 | |
7 | K2708 |
Sanken |
2SK2708 | |
8 | K2711 |
Rohm |
2SK2711 | |
9 | K2715 |
Rohm |
2SK2715 | |
10 | K2717 |
Toshiba |
Silicon N Channel MOS Type Field Effect Transistor | |
11 | K2718 |
Toshiba Semiconductor |
2SK2718 | |
12 | K2719 |
Toshiba Semiconductor |
N-Channel MOS Type Field Effect Transistor |