The basic capacitor construction consists of ceramic dielectric materials et4U.com processed into a tape with a typical thickness range from 0.025 to 0.076 mm. Metal electrode patterns are applied using a thick film screening process. Multiple layers are stacked and laminated in such a manner that electrodes are alternately exposed when the pattern is cut i.
Mono-kapTM series
• Very high capacitance per unit volume
• Low cost.
APPLICATIONS These conformally coated radial leaded capacitors are designed for commercial and industrial applications in four dielectrics, NP0 (ultra-stable), X7R (stable) and Z5U, Y5V (general purpose). Applications include timing, coupling/decoupling, signal comparison and biasing. Mono-kap™ capacitors are suitable for automatic insertion equipment. DESCRIPTION
The basic capacitor construction consists of ceramic dielectric materials et4U.com processed into a tape with a typical thickness range from 0.025 to 0.076 mm. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K222 |
Sanyo Semicon Device |
2SK222 | |
2 | K2220 |
Renesas |
Silicon N Channel MOS FET | |
3 | K2220 |
Hitachi Semiconductor |
2SK2220 | |
4 | K2221 |
Renesas |
Silicon N-Channel MOSFET | |
5 | K2221 |
Hitachi Semiconductor |
2SK2221 | |
6 | K2222 |
ETC |
N-Channel Transistor | |
7 | K2225 |
Hitachi Semiconductor |
2SK2225 | |
8 | K2225 |
Renesas |
High Speed Power Switching MOSFET | |
9 | K2228 |
Toshiba |
Silicon N-Channel MOSFET | |
10 | K2229 |
Toshiba |
N-Channel MOSFET | |
11 | K222J15C0GF5xx |
Vishay Intertechnology |
(K223xxxx) Leaded Ceramic Multilayer Capacitors | |
12 | K2200 |
Toshiba Semiconductor |
2SK2200 |