2SK2220, 2SK2221 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline REJ03G1004-0200 (Prev.
• High power gain
• Excellent frequency response
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
Outline
REJ03G1004-0200 (Previous: ADE-208-1352)
Rev.2.00 Sep 07, 2005
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
1. Gate G 2. Source
(Flange) 3. Drain
1 2 3
S
Rev.2.00 Sep 07, 2005 page 1 of 5
2SK2220, 2SK2221
Absolute Maximum Ratings
Item
Drain to source voltage
2SK2220
2SK2221
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissi.
2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K222 |
Sanyo Semicon Device |
2SK222 | |
2 | K2221 |
Renesas |
Silicon N-Channel MOSFET | |
3 | K2221 |
Hitachi Semiconductor |
2SK2221 | |
4 | K2222 |
ETC |
N-Channel Transistor | |
5 | K2225 |
Hitachi Semiconductor |
2SK2225 | |
6 | K2225 |
Renesas |
High Speed Power Switching MOSFET | |
7 | K2228 |
Toshiba |
Silicon N-Channel MOSFET | |
8 | K2229 |
Toshiba |
N-Channel MOSFET | |
9 | K222J15C0GF5xx |
Vishay Intertechnology |
(K223xxxx) Leaded Ceramic Multilayer Capacitors | |
10 | K222K15X7Rxxxx |
Vishay Intertechnology |
(K223xxxx) Leaded Ceramic Multilayer Capacitors | |
11 | K2200 |
Toshiba Semiconductor |
2SK2200 | |
12 | K2200EH70 |
Littelfuse |
High Energy Bidirectional SIDACs |