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2SK2220, 2SK2221 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline REJ03G1004-0200 (Prev.
• High power gain
• Excellent frequency response
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
Outline
REJ03G1004-0200 (Previous: ADE-208-1352)
Rev.2.00 Sep 07, 2005
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
1. Gate G 2. Source
(Flange) 3. Drain
1 2 3
S
Rev.2.00 Sep 07, 2005 page 1 of 5
2SK2220, 2SK2221
Absolute Maximum Ratings
Item
Drain to source voltage
2SK2220
2SK2221
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissi.
K2221 - Hitachi Semiconductor
2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K222 |
Sanyo Semicon Device |
2SK222 |
|
| 2 | K2220 |
Renesas |
Silicon N Channel MOS FET |
|
| 3 | K2220 |
Hitachi Semiconductor |
2SK2220 |
|
| 4 | K2222 |
ETC |
N-Channel Transistor |
|
| 5 | K2225 |
Hitachi Semiconductor |
2SK2225 |
|
| 6 | K2225 |
Renesas |
High Speed Power Switching MOSFET |
|
| 7 | K2228 |
Toshiba |
Silicon N-Channel MOSFET |
|
| 8 | K2229 |
Toshiba |
N-Channel MOSFET |
|
| 9 | K222J15C0GF5xx |
Vishay Intertechnology |
(K223xxxx) Leaded Ceramic Multilayer Capacitors |
|
| 10 | K222K15X7Rxxxx |
Vishay Intertechnology |
(K223xxxx) Leaded Ceramic Multilayer Capacitors |
|
| 11 | K2200 |
Toshiba Semiconductor |
2SK2200 |
|
| 12 | K2200EH70 |
Littelfuse |
High Energy Bidirectional SIDACs |
|