logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Preview

K2186 - INCHANGE

Download Datasheet
Stock / Price

K2186 2SK2186

·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 10 A ID(puls) Pulse Drain Current 30 .

Features

5A; VGS=0 RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID= 5A VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance ton Turn-on Time toff Turn-off Time VDS=10V; VGS=0V; fT=1MHz VGS=10V;ID=5A; RL=30Ω MIN TYPE MAX UNIT 500 V 2.5 3.0 3.5 V 1.5 V 0.8 1.0 Ω ±100 nA 250 µA 890 70 pF 200 70 110 ns 140 220 isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn .

Related Product

No. Partie # Fabricant Description Fiche Technique
1 K2182
Shindengen Electric
Power MOSFET Datasheet
2 K2185
Shindengen Electric
2SK2185 Datasheet
3 K2187
Shindengen Electric
2SK2187 Datasheet
4 K2188
Shindengen Electric
2SK2188 Datasheet
5 K210
Aeroflex
Silicon Zener Diodes Datasheet
6 K210
Knox Semiconductor
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE Datasheet
7 K210
Knox Inc
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE Datasheet
8 K210
Toshiba Semiconductor
2SK210 Datasheet
9 K2101
Fuji Electric
2SK2101 Datasheet
10 K2111
Kexin
MOS Field Effect Transistor Datasheet
11 K2111
NEC
2SK2111 Datasheet
12 K2114
Hitachi Semiconductor
2SK2114 Datasheet
More datasheet from INCHANGE
Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact