·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 10 A ID(puls) Pulse Drain Current 30 .
5A; VGS=0 RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID= 5A VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance ton Turn-on Time toff Turn-off Time VDS=10V; VGS=0V; fT=1MHz VGS=10V;ID=5A; RL=30Ω MIN TYPE MAX UNIT 500 V 2.5 3.0 3.5 V 1.5 V 0.8 1.0 Ω ±100 nA 250 µA 890 70 pF 200 70 110 ns 140 220 isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2182 |
Shindengen Electric |
Power MOSFET | |
2 | K2185 |
Shindengen Electric |
2SK2185 | |
3 | K2187 |
Shindengen Electric |
2SK2187 | |
4 | K2188 |
Shindengen Electric |
2SK2188 | |
5 | K210 |
Aeroflex |
Silicon Zener Diodes | |
6 | K210 |
Knox Semiconductor |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | |
7 | K210 |
Knox Inc |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | |
8 | K210 |
Toshiba Semiconductor |
2SK210 | |
9 | K2101 |
Fuji Electric |
2SK2101 | |
10 | K2111 |
Kexin |
MOS Field Effect Transistor | |
11 | K2111 |
NEC |
2SK2111 | |
12 | K2114 |
Hitachi Semiconductor |
2SK2114 |