The K1S3216B1C is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface. Process Technology: CMOS Organization: 2M x16 bit Power Supply Voltage: 1..
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UtRAM
GENERAL DESCRIPTION
The K1S3216B1C is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface.
Process Technology: CMOS Organization: 2M x16 bit Power Supply Voltage: 1.7V~2.1V Three State Outputs Compatible with Low Power SRAM Dual Chip selection support
• Package Type: 48-FBGA-6.0x8.0
PRODUCT FAMILY
Power Dissipation Product Family Operating T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K1S3216BCC |
SAMSUNG Electronics |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory | |
2 | K1S3216BCD |
Samsung semiconductor |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory | |
3 | K1S321611C |
Samsung |
2Mx16 bit Uni-Transistor Random Access Memory | |
4 | K1S321611C-FI70 |
Samsung |
2Mx16 bit Uni-Transistor Random Access Memory | |
5 | K1S321611C-I |
Samsung |
2Mx16 bit Uni-Transistor Random Access Memory | |
6 | K1S321615M |
Samsung semiconductor |
2Mx16 bit Uni-Transistor Random Access Memory | |
7 | K1S32161CC |
Samsung semiconductor |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory | |
8 | K1S161611A |
Samsung |
1Mx16 bit Uni-Transistor Random Access Memory | |
9 | K1S161611A-I |
Samsung |
1Mx16 bit Uni-Transistor Random Access Memory | |
10 | K1S16161CA |
Samsung |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory | |
11 | K1S16161CA |
Samsung |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory | |
12 | K1S16161CA-I |
Samsung |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |