The K1S321615M is fabricated by SAMSUNG’ s advanced CMOS technology using one transistor memory cell. The device support, extended temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current. Process Technology: CMOS Organization: 2M x16 bit Power Supply Voltag.
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UtRAM
GENERAL DESCRIPTION
The K1S321615M is fabricated by SAMSUNG’ s advanced CMOS technology using one transistor memory cell. The device support, extended temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
Process Technology: CMOS Organization: 2M x16 bit Power Supply Voltage: 2.7~3.3V Three state output status Deep Power Down: Memory cell data hold invalid Package Type: 48-TBGA-9.00x12.00
• Compatible with Low Power SRAM
PRODUCT FAMILY
Product Fami.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K1S321611C |
Samsung |
2Mx16 bit Uni-Transistor Random Access Memory | |
2 | K1S321611C-FI70 |
Samsung |
2Mx16 bit Uni-Transistor Random Access Memory | |
3 | K1S321611C-I |
Samsung |
2Mx16 bit Uni-Transistor Random Access Memory | |
4 | K1S32161CC |
Samsung semiconductor |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory | |
5 | K1S3216B1C |
Samsung semiconductor |
2Mx16 bit Uni-Transistor Random Access Memory | |
6 | K1S3216BCC |
SAMSUNG Electronics |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory | |
7 | K1S3216BCD |
Samsung semiconductor |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory | |
8 | K1S161611A |
Samsung |
1Mx16 bit Uni-Transistor Random Access Memory | |
9 | K1S161611A-I |
Samsung |
1Mx16 bit Uni-Transistor Random Access Memory | |
10 | K1S16161CA |
Samsung |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory | |
11 | K1S16161CA |
Samsung |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory | |
12 | K1S16161CA-I |
Samsung |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |