K1S2816BCM - Samsung semiconductor

K1S2816BCM 8Mx16 bit Page Mode Uni-Transistor Random Access Memory

The K1S2816BCM is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports 4 page read operation and Industrial temperature range. The device supports dual chip selection for user interface. The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperatur.

Features

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• UtRAM GENERAL DESCRIPTION The K1S2816BCM is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports 4 page read operation and Industrial temperature range. The device supports dual chip selection for user interface. The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range. Process Technology: CMOS Organization: 8M x16 bit Power Supply Voltage: 1.7~2.0V Three State Outputs Compatible with Low Power SRAM
• Support 4 page read mode
• Package Type: TBD PRODUCT FAMIL.