K1S1616B1A - Samsung semiconductor

K1S1616B1A 1Mx16 bit Uni-Transistor Random Access Memory

The K1S1616B1A is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface. Process Technology: CMOS Organization: 1M x16 bit Power Supply Voltage: 1..

Features

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• Preliminary UtRAM www.DataSheet4U.com GENERAL DESCRIPTION The K1S1616B1A is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface. Process Technology: CMOS Organization: 1M x16 bit Power Supply Voltage: 1.7V~2.1V Three State Outputs Compatible with Low Power SRAM Dual Chip selection support
• Package Type: 48-FBGA-6.00x7.00 PRODUCT FAMILY Power Dissipation Product Famil.