monolithic dual n-channel JFETs --~ designed for • • • o - • ~ FET Input Amplifiers • Low and Medium Frequency Amplifiers • Impedance Converters • Precision Instrumentation Amplifiers • Comparators ABSOLUTE MAXIMUM RATINGS (25°C) Gate-To-Gate Voltage _________________________ ±40 V Gate-Drain or Gate-Source Voltage _______________ -40 V Gate Current __ ......
)
S, 0, G,
-5~ G,
G2 NC
S,
Sz
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
.... .... .... J410
Min Typ
J411 Min Typ
J412 Min Typ
Unit
Test Conditions
-1
IGSS
- 2 S VGS(off) T
- , 3 ~ BVGSS
------..4 ClOSS 'G vGS
~ 9f, -.!.
-.!.
D y
90S
- 10 N A
- , 11 M ei5$
12 C Crss
-
13 ON
Gate Reverse Current (Note 1)
Gate-Source Cutoff Voltage
Gate-Source Breakdown Voltage
Saturation DrainCurrllnt (Note 2)
Gate Current (Note 1)
Gate
·Source Voltage
Common-Source Forward Transconductance
-<> .
• -40
D.'
-<>.2 1.000
600
Common-5ource Output Conductance
Co.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | J411 |
Siliconix |
monolithic dual n-channel JFET | |
2 | J412 |
Siliconix |
monolithic dual n-channel JFET | |
3 | J412 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
4 | J401 |
Siliconix |
monolithic dual n-channel JFET | |
5 | J402 |
Siliconix |
monolithic dual n-channel JFET | |
6 | J403 |
Siliconix |
monolithic dual n-channel JFET | |
7 | J404 |
Siliconix |
monolithic dual n-channel JFET | |
8 | J405 |
Siliconix |
monolithic dual n-channel JFET | |
9 | J406 |
Siliconix |
monolithic dual n-channel JFET | |
10 | J421 |
Siliconix |
monolithic dual n-channel JFET | |
11 | J421 |
Sanyo |
2SJ421 | |
12 | J422 |
Siliconix |
monolithic dual n-channel JFET |