monolithic dual n-channel JFETs designed for • • • FEY Input Amplifiers •• Low and Medium Frequency Amplifiers • Impedance Converters • Precision Instrumentation Amplifiers • Comparators ABSOLUTE MAXIMUM RATINGS (25"C) Gate-Drain or Gate-Source Voltage Forward Gate Current . Device Dissipation (each side) @T~ =85°C derate 7.5 mwrc Total evice Dissipation.
tic
... .... J
·SourceBreakdown
Vott~
-.
-50
-50
_50
-50
-5(
V
Vos - 0,10 ~ -1 j.lA
2 '0"
Gate Reverse Current (Note!)
_100
100
-11lC
-101
-100
-100 oA
VOS~O.VGS~-30V
3 S VaS(off)
•4 ~ VGS
I
·5 ClOSS
7 '0
8 BVG1-G2
Gate,Soll.reCulaff Voltage Gate-Source Votlagelon) &nurat'on Drain Current (Note2l
OateCurrent(Note 1)
Gilte-Oate Breakdown Voltage
-2.5 -.5-2.5 -.5_2.5 -.5-2.5 -.5-2.5 -.5_2.5
V
-2.3
-2.3
-2.3
-2.3
-2.3
-2.3
0.5 100 0.510.0 0.5 10.0 0.5 10.0 0..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | J402 |
Siliconix |
monolithic dual n-channel JFET | |
2 | J403 |
Siliconix |
monolithic dual n-channel JFET | |
3 | J404 |
Siliconix |
monolithic dual n-channel JFET | |
4 | J405 |
Siliconix |
monolithic dual n-channel JFET | |
5 | J406 |
Siliconix |
monolithic dual n-channel JFET | |
6 | J410 |
Siliconix |
monolithic dual n-channel JFET | |
7 | J411 |
Siliconix |
monolithic dual n-channel JFET | |
8 | J412 |
Siliconix |
monolithic dual n-channel JFET | |
9 | J412 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
10 | J421 |
Siliconix |
monolithic dual n-channel JFET | |
11 | J421 |
Sanyo |
2SJ421 | |
12 | J422 |
Siliconix |
monolithic dual n-channel JFET |