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Ordering number:EN5077 Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. P-Channel Silicon MOSFET 2SJ421 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2116 [2SJ421] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage.
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
P-Channel Silicon MOSFET
2SJ421
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2116
[2SJ421] 85
0.1 1.5 1.8max 4.4 0.3 6.0
1 5.0
4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
0.595 1.27 0.43
Conditions
PW≤10µs, duty cycle≤1% Mounted on ceramic board (1000mm2× 0.8mm)
Electrical Characteristics at T.
J421 - Siliconix
monolithic dual H n-channel JFETs Performance Curves NQT See Sedion 4 designed for • • • • Very High Input Impedance .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | J422 |
Siliconix |
monolithic dual n-channel JFET |
|
| 2 | J423 |
Siliconix |
monolithic dual n-channel JFET |
|
| 3 | J424 |
Siliconix |
monolithic dual n-channel JFET |
|
| 4 | J425 |
Siliconix |
monolithic dual n-channel JFET |
|
| 5 | J425 |
Sanken electric |
MOSFET |
|
| 6 | J426 |
Siliconix |
monolithic dual n-channel JFET |
|
| 7 | J401 |
Siliconix |
monolithic dual n-channel JFET |
|
| 8 | J402 |
Siliconix |
monolithic dual n-channel JFET |
|
| 9 | J403 |
Siliconix |
monolithic dual n-channel JFET |
|
| 10 | J404 |
Siliconix |
monolithic dual n-channel JFET |
|
| 11 | J405 |
Siliconix |
monolithic dual n-channel JFET |
|
| 12 | J406 |
Siliconix |
monolithic dual n-channel JFET |
|