IXXK100N60B3H1 - IXYS

IXXK100N60B3H1 Diode

Advance Technical Information XPTTM 600V GenX3TM w/ Diode IXXK100N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC90 = V ≤ CE(sat) tfi(typ) = 600V 100A 1.80V 150ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC90 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25.

Features

z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z Anti-Parallel Ultra Fast Diode z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts © 2010 IXYS CORPORATION, All Rights Reserved DS100285(12/10) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qg.