IXTQ96N15P - IXYS Corporation

IXTQ96N15P N-Channel MOSFET

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 96N15P IXTT 96N15P V DSS ID25 RDS(on) = 150 V = 96 A ≤ 24 mΩ Symbol VDSS VDGR VGSS VGSM I D25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL T SOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient T C = 25° C External lead curr.

Features

l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 150 V VGS(th) VDS = VGS, ID = 250µA 2.5 5.0 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 125° C 25 µA 250 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 24 m Ω Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved.