IXTQ100N25P - IXYS Corporation

IXTQ100N25P N-Channel MOSFET

PolarHTTM Power MOSFET IXTK 100N25P IXTQ 100N25P IXTT 100N25P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 250 V 100 A 27 mΩ Symbol Test Conditions Maximum Ratings TO-264 (IXTK) V DSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR E AR EAS dv/dt PD TJ T JM Tstg TL TSOLD M d Weight T J = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ .

Features

l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99118E(12/05) Symbol gfs C iss C oss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS R thCS IXTK 100N25P IXTQ 100N25P IXTT 100N25P Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. TO-3P (IXTQ) Outline VDS= 10 V; ID = 0.5 ID25, pulse test 40 56 S V = 0 V, V = 25 V, f = 1 MHz GS DS 6300 pF 1150 pF 2.