IXTQ102N15T - IXYS

IXTQ102N15T Power MOSFET

Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) TO-220 (IXTP) VDSS = ID25 = RDS(on) ≤ 150V 102A 18mΩ TO-3P (IXTQ) G S (TAB) GD S (TAB) G DS (TAB) G D S (TAB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weig.

Features

z International Standard Packages z Avalanche Rated Advantages z Easy to Mount z Space Savings z High Power Density Applications z DC-DC Converters z Battery Chargers z Switched-Mode and Resonant-Mode Power Supplies z DC Choppers z AC Motor Drives z Uninterruptible Power Supplies z High Speed Power Switching Applications © 2009 IXYS CORPORATION, All Rights Reserved DS99661C(04/09) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs VDS= 10V, ID = 0.5
• ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VD.